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this is information on a product in full production. june 2013 docid023740 rev 4 1/22 22 STGB20H60DF, stgf20h60df, stgp20h60df 600 v, 20 a high speed trench gate field-stop igbt datasheet - production data figure 1. internal schematic diagram features ? high speed switching ? tight parameters distribution ? safe paralleling ? low thermal resistance ? short-circuit rated ? ultrafast soft recovery antiparallel diode applications ? motor control ? ups, pfc description this device is an igbt developed using an advanced proprietary trench gate and field stop structure. this igbt series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. furthermore, a positive v ce(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation. to-220 d2pak 1 2 3 tab 1 3 tab to-220fp 1 2 3 c (2, tab) e (3) g (1) table 1. device summary order codes marking packages packaging STGB20H60DF gb20h60df d2pak tape and reel stgf20h60df gf20h60df to-220fp tube stgp20h60df gp20h60df to-220 tube www.st.com
contents STGB20H60DF, stgf20h60df, stgp20h60df 2/22 docid023740 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
docid023740 rev 4 3/22 STGB20H60DF, stgf20h60df, stgp20h60df electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter to-220 d2pak to-220fp unit v ces collector-emitter voltage (v ge = 0) 600 v i c continuous collector current at t c = 25 c 40 40 (1) 1. limited by maximum junction temperature. a continuous collector current at t c = 100 c 20 20 (1) a i cp (2) 2. pulse width limited by maximum junction temperature and turn-off within rbsoa. pulsed collector current 80 80 (1) a v ge gate-emitter voltage 20 v i f continuous forward current t c = 25 c 40 40 (1) a continuous forward current at t c = 100 c 20 20 (1) i fp (2) pulsed forward current 80 80 (1) a p tot total dissipation at t c = 25 c 167 37 w t stg storage temperature range - 55 to 150 c t j operating junction temperature - 55 to 175 table 3. thermal data symbol parameter to-220 d2pak to-220fp unit r thjc thermal resistance junction-case igbt 0.9 4 c/w r thjc thermal resistance junction-case diode 2.5 5.6 c/w r thja thermal resistance junction-ambient 62.5 c/w
electrical characteristics STGB20H60DF, stgf20h60df, stgp20h60df 4/22 docid023740 rev 4 2 electrical characteristics t j = 25 c unless otherwise specified. table 4. static symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 2 ma 600 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 20 a 1.6 2.0 v v ge = 15 v, i c = 20 a t j = 125 c 1.75 v ge = 15 v, i c = 20 a t j = 175 c 1.8 v ge(th) gate threshold voltage v ce = v ge , i c = 1 ma 5.0 6.0 7.0 v i ces collector cut-off current (v ge = 0) v ce = 600 v 25 a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 250 na table 5. dynamic symbol parameter test conditions min. typ. max. unit c ies input capacitance v ce = 25 v, f = 1 mhz, v ge = 0 -2750- pf c oes output capacitance - 110 - pf c res reverse transfer capacitance -65-pf q g total gate charge v cc = 400 v, i c = 20 a, v ge = 15 v -115-nc q ge gate-emitter charge - 22 - nc q gc gate-collector charge - 45 - nc
docid023740 rev 4 5/22 STGB20H60DF, stgf20h60df, stgp20h60df electrical characteristics table 6. switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v ce = 400 v, i c = 20 a, r g = 10 , v ge = 15 v 42.5 - ns t r current rise time 11.9 - ns (di/dt)on turn-on current slope 1345 - a/ s t d(on) turn-on delay time v ce = 400 v, i c = 20 a, r g = 10 , v ge = 15 v t j = 175 c 42.5 - ns t r current rise time 13.4 ns (di/dt)on turn-on current slope 1180 a/ s t r(voff) off voltage rise time v ce = 400 v, i c = 20 a, r g = 10 , v ge = 15 v 20 - ns t d(off) turn-off delay time 177 - ns t f current fall time 55 - ns t r(voff) off voltage rise time v ce = 400 v, i c = 20 a, r g = 10 , v ge = 15 v t j = 175 c 26 - ns t d(off) turn-off delay time 173 - ns t f current fall time 86 - ns t sc short-circuit withstand time v cc 360 v, v ge = 15 v 3 5 - s table 7. switching energy (inductive load) symbol parameter test conditions min. typ. max. unit eon (1) 1. energy losses include reverse recovery of the diode. turn-on switching losses v ce = 400 v, i c = 20 a, r g = 10 , v ge = 15 v - 209 - j e off (2) 2. turn-off losses include also the tail of the collector current. turn-off switching losses - 261 - j e ts total switching losses - 470 - j eon (1) turn-on switching losses v ce = 400 v, i c = 20 a, r g = 10 , v ge = 15 v t j = 175 c - 480 - j e off (2) turn-off switching losses - 416 - j e ts total switching losses - 896 - j
electrical characteristics STGB20H60DF, stgf20h60df, stgp20h60df 6/22 docid023740 rev 4 table 8. collector-emitter diode symbol parameter test conditions min. typ. max. unit v f forward on-voltage i f = 20 a i f = 20 a, t j = 175 c - 1.8 1.3 2.2 v v t rr reverse recovery time v r = 60 v; if = 20 a; di f /dt = 100 a / s -90-ns q rr reverse recovery charge 110 nc i rrm reverse recovery current 2.4 a t rr reverse recovery time v r = 60 v; if = 20 a; di f /dt = 100 a / s t j = 175 c - 180 - ns q rr reverse recovery charge - 466 - nc i rrm reverse recovery current - 5.2 - a
docid023740 rev 4 7/22 STGB20H60DF, stgf20h60df, stgp20h60df electrical characteristics 2.1 electrical characteristics (curves) figure 2. output characteristics (t j = 25c) figure 3. output characteristics (t j = 175c) figure 4. transfer characteristics figure 5. normalized v ge(th) vs junction temperature 9 v i c 60 40 20 0 02 v ce (v) 4 (a) 13 80 100 15 v 13 v 11 v am16287v1 9 v 7 v 15 v i c 60 40 20 0 02 v ce (v) 4 (a) 13 80 100 13 v 11 v am16288v1 25 c i c 60 40 20 0 79 v ge (v) 11 (a) 810 80 100 175 c -40 c v ce = 5 v am16289v1 v ce = v ge i c = 1 ma v ge(th) 0.9 0.8 0.7 0.6 -75 25 t j (c) 125 (norm) -25 75 1 am16292v1
electrical characteristics STGB20H60DF, stgf20h60df, stgp20h60df 8/22 docid023740 rev 4 figure 6. collector current vs. case temperature for d2pak and to-220 figure 7. collector current vs. case temperature for to-220fp figure 8. collector current vs. frequency for d2pak and to-220 figure 9. collector current vs. frequency for to-220fp figure 10. power dissipation vs. case temperature for d2pak and to-220 figure 11. power dissipation vs. case temperature for to-220fp i c 24 16 8 0 050 t c (c) 100 (a) 25 75 32 40 125 am16282v1 i c 12 8 4 0 050 t c (c) 125 (a) 25 75 16 20 100 am162821v1 i c 30 20 10 1 f(khz) (a) t c = 80 c rectangular current shape (duty cycle= 0.5, v cc = 400 v r g = 10 , v ge = 0/15v, tj= 175 c 10 40 t c = 100 c 50 60 am162981v1 i c 8 4 0 1 f(khz) (a) t c = 80 c rectangular current shape (duty cycle= 0.5, v cc = 400 v r g = 10 , v ge = 0/15v, tj= 175 c 10 12 t c = 100 c 16 20 am162982v1 p tot 120 80 40 0 050 t c (c) 125 (w) 25 75 160 100 150 am16281v1 p tot 24 16 8 0 050 t c (c) 125 (w) 25 75 32 100 am16284v1
docid023740 rev 4 9/22 STGB20H60DF, stgf20h60df, stgp20h60df electrical characteristics figure 12. v ce(sat) vs. junction temperature figure 13. v ce(sat) vs. collector current figure 14. forward bias safe operating area for d 2 pak and to-220 figure 15. thermal impedance for d 2 pak and to-220 figure 16. forward bias safe operating area for to-220fp figure 17. thermal impedance for to-220fp v ce(sat) 1.9 1.7 1.5 1.3 -75 25 t j (c) 125 (v) -25 75 2.1 2.3 i c = 40 a v ge = 15 v i c = 20 a i c = 10 a am16290v1 v ce(sat) 2.2 1.8 1.4 1.0 020 i c (a) (v) 10 30 v ge = 15 v t j = 175 c t j = -40 c t j = 25 c am16291v1 (single pulse t c =25c, t j <=175c; v ge =15v) i c 10 1 0.1 1 100 v ce (v) (a) 10 1 ms 100 s v ce(sat) limit am16280v1 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 zth=k rthj-c =tp/ tp single pulse =0.5 zthto2t_b i c 10 1 0.1 1 100 v ce (v) (a) 10 1 ms 100 s 1 s (single pulse t c =25c, t j <=175c; v ge =15v) v ce(sat) limit am16283v1 zth=k rthj-c =tp/ tp 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -3 10 -1 k 0.2 0.05 0.02 0.01 0.1 single pulse =0.5 zthtof2t_b 10 -2 10
electrical characteristics STGB20H60DF, stgf20h60df, stgp20h60df 10/22 docid023740 rev 4 figure 18. diode v f vs. forward current figure 19. gate charge vs. gate-emitter voltage figure 20. capacitance variations vs. v ce figure 21. switching losses vs. gate resistance figure 22. switching losses vs. collector current figure 23. switching losses vs. temperature v f 1.9 1.5 1.1 10 50 i f (a) (v) 30 t j = -40 c 20 40 2.3 t j = 25 c t j = 175 c am16293v1 v ge 8 4 0 0 q g (nc) (v) 80 v cc = 400 v i c = 20 a 40 120 12 16 am16294v1 c 1000 100 10 0.1 v ce (v) (pf) 10 c oes 1 c ies c res am16295v1 e 550 450 350 0 r g ( ) (j) 20 e off 10 e on 30 40 650 750 v cc = 400 v, v ge = 15v, i c = 20 a, t j = 175c am16296v1 e 600 400 200 10 i c ( a ) (j) 20 e off e on 30 800 1000 v cc = 400 v, v ge = 15v, r g = 10 , t j = 175c am162961v1 e 400 300 200 25 t j ( c ) (j) 75 e off e on 125 v cc = 400 v, v ge = 15v, r g = 10 , i c = 20 a am16297v1
docid023740 rev 4 11/22 STGB20H60DF, stgf20h60df, stgp20h60df electrical characteristics figure 24. short-circuit time and current vs. v ge t sc 12 8 4 10 v ge (v) (s) 11 t sc i sc 12 v cc = 360 v, r g = 10 13 14 16 i sc (a) 50 150 250 350 am16298v1
test circuits STGB20H60DF, stgf20h60df, stgp20h60df 12/22 docid023740 rev 4 3 test circuits figure 25. test circuit for inductive load switching figure 26. gate charge test circuit figure 27. switching waveform figure 28. diode recovery time waveform am01504v1 am01505v1 am01506v1 90% 10% 90% 10% v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcross 90% 10% am01507v1 i rrm i f di/dt t rr t a t b q rr i rrm t v f dv/dt
docid023740 rev 4 13/22 STGB20H60DF, stgf20h60df, stgp20h60df package mechanical data 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
package mechanical data STGB20H60DF, stgf20h60df, stgp20h60df 14/22 docid023740 rev 4 figure 29. to-220fp drawing 7012510_rev_k_b
docid023740 rev 4 15/22 STGB20H60DF, stgf20h60df, stgp20h60df package mechanical data table 10. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
package mechanical data STGB20H60DF, stgf20h60df, stgp20h60df 16/22 docid023740 rev 4 figure 30. to-220 type a drawing bw\sh$b5hyb7
docid023740 rev 4 17/22 STGB20H60DF, stgf20h60df, stgp20h60df package mechanical data table 11. d2pak mechanical data dim. mm min. typ. max. a 4.40 4.60 a1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 d 8.95 9.35 d1 7.50 e10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h15 15.85 j1 2.49 2.69 l 2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
package mechanical data STGB20H60DF, stgf20h60df, stgp20h60df 18/22 docid023740 rev 4 figure 31. d2pak drawing figure 32. d2pak footprint (a) a. all dimension are in millimeters 0079457_t 16.90 12.20 9.75 3.50 5.08 1.60 footprint
docid023740 rev 4 19/22 STGB20H60DF, stgf20h60df, stgp20h60df packaging mechanical data 5 packaging mechanical data table 12. d2pak tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t0.25 0.35 w23.7 24.3
packaging mechanical data STGB20H60DF, stgf20h60df, stgp20h60df 20/22 docid023740 rev 4 figure 33. tape figure 34. reel p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius top cover tape am08852v2 a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at sl ot location t tape slot in core for tape start 25 mm min. width am08851v2
docid023740 rev 4 21/22 STGB20H60DF, stgf20h60df, stgp20h60df revision history 6 revision history table 13. document revision history date revision changes 03-oct-2012 1 initial release. 18-mar-2013 2 added new order code stgf20h60df, mechanical data table 9 and figure 29 on page 14 . added chapter 2.1: electrical characteristics (curves) . 22-mar-2013 3 document status promoted from preliminary to production data. 03-jun-2013 4 updated p tot in table 2: absolute maximum ratings , r thjc in table 3: thermal data and figure 10: power dissipation vs. case temperature for d2pak and to-220 . updated section 4: package mechanical data for to-220.
STGB20H60DF, stgf20h60df, stgp20h60df 22/22 docid023740 rev 4 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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